rev.3.00, apr.01.2 004, page 1 of 6 HAT2195R silicon n channel power mos fet power switching rej03g0060-0300z rev.3.00 apr.01.2004 features ? high speed switching ? capable of 4.5 v gate drive ? low drive current ? high density mounting ? low on-resistance r ds(on) = 4.6 m ? typ. (at v gs = 10 v) outline sop-8 1 2 3 4 5 6 7 8 1, 2, 3 source 4 gate 5, 6, 7, 8 drain g d sss d dd 4 1 23 56 7 8 absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 30 v gate to source voltage v gss 20 v drain current i d 18 a drain peak current i d(pulse) note1 144 a body-drain diode reverse drain current i dr 18 a avalanche current i ap note 2 18 a avalanche energy e ar note 2 32.4 mj channel dissipation pch note3 2.5 w channel to ambient thermal impedance ch-a note3 50 c/w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. value at tch = 25 c, rg 50 ? 3. when using the glass epoxy boar d (fr4 40 x 40 x 1.6 mm), pw 10s
HAT2195R rev.3.00, apr.01.20 04, page 2 of 6 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 30 ? ? v i d = 10 ma, v gs = 0 gate to source leak current i gss ?? 0.1 av gs = 20 v, v ds = 0 zero gate voltage drain current i dss ??1 av ds = 30 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.0 ? 2.5 v v ds = 10 v, i d = 1 ma static drain to source on state r ds(on) ?4.65.8m ? i d = 9 a, v gs = 10 v note4 resistance r ds(on) ?5.88.4m ? i d = 9 a, v gs = 4.5 v note4 forward transfer admittance |y fs |25 42 ? s i d = 9 a, v ds = 10 v note4 input capacitance ciss ? 3400 ? pf v ds = 10 v output capacitance coss ? 785 ? pf v gs = 0 reverse transfer capacitance crss ? 250 ? pf f = 1 mhz gate resistance rg ? 1.0 ? ? total gate charge qg ? 23 ? nc v dd = 10 v gate to source charge qgs ? 10 ? nc v gs = 4.5 v gate to drain charge qgd ? 5.5 ? nc i d = 18 a turn-on delay time t d(on) ?12?nsv gs = 10 v, i d = 9 a rise time t r ?16?nsv dd ? 10 v turn-off delay time t d(off) ?50?nsr l = 1.11 ? fall time t f ? 6.5 ? ns rg = 4.7 ? body?drain diode forward voltage v df ? 0.80 1.04 v if = 18 a, v gs = 0 note4 body?drain diode reverse recovery time t rr ?32?ns if = 18 a, v gs = 0 dif/ dt = 100 a/ s notes: 4. pulse test main characteristics channel dissipation pch (w) ambient temperature ta (c) power vs. temperature derating drain to source voltage v ds (v) drain current i d (a) maximum safe operation area note 5 : when using the glass epoxy board (fr4 40x40x1.6 mm) 4.0 3.0 2.0 1.0 0 50 100 150 200 100 10 1 0.1 0.01 0.1 0.3 1 3 10 30 100 test condition : when using the glass epoxy board (fr4 40x40x1.6 mm), pw < 10 s 500 ta = 25 c 1 shot pulse pw = 10 ms 10 s 100 s operation in this area is limited by r ds(on) note 5 dc operation (p w < 10 s) 1 ms
HAT2195R rev.3.00, apr.01.20 04, page 3 of 6 gate to source voltage v gs (v) drain to source voltage v ds(on) (mv) drain to source saturation voltage vs. gate to source voltage drain current i d (a) drain to source on state resistance r ds(on) (m ? ) static drain to source on state resistance vs. drain current case temperature tc (c) drain to source on state resistance r ds(on) (m ? ) static drain to source on state resistance vs. temperature forward transfer admittance |yfs| (s) drain current i d (a) forward transfer admittance vs. drain current 200 160 120 80 40 0 4 8 12 16 20 20 10 2 5 1 30 300 12 10 8 6 4 ?25 0 25 50 75 150 100 125 2 pulse test i d = 20 a 5 a 10 a 1 10 100 1000 3 100 50 v gs = 4.5 v 10 v pulse test 5 a, 10 a 20 a i d = 5 a, 10 a, 20 a v gs = 4.5 v 10 v pulse test 330 0.1 1 10 100 0.3 10 1000 30 100 300 1 0.3 3 0.1 tc = ?25 c v ds = 10 v pulse test 75 c 25 c drain to source voltage v ds (v) drain current i d (a) typical output characteristics gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics 50 40 30 20 10 0 246810 50 40 30 20 10 0 1234 5 tc = 75c 25c ?25c v = 10 v pulse test ds v gs = 2.4 v 10 v 4 v 2.6 v 2.8 v pulse test
HAT2195R rev.3.00, apr.01.20 04, page 4 of 6 reverse drain current i dr (a) reverse recovery time trr (ns) body drain diode reverse recovery time capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage drain current i d (a) switching time t (ns) switching characteristics 0.3 1 3 10 100 30 100 20 50 10 010 25 15 20 530 10000 3000 1000 300 100 30 10 ciss coss crss v gs = 0 f = 1 mhz 300 30 100 10 1 3 0.1 di/dt = 100 a/ s v gs = 0, ta = 25 c 0.3 1 3 10 100 30 0.1 v gs = 10 v, v ds = 10 v rg = 4.7 ? , duty < 1 % 50 40 30 20 10 0 20 16 12 8 4 20 40 60 80 100 0 i d = 18 a v gs v ds v dd = 25 v 10 v 5 v v dd = 25 v 10 v 5 v gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics 1000 t f t r t d(off) t d(on) source to drain voltage v sd (v) reverse drain current i dr (a) 50 40 30 20 10 0 0.4 0.8 1.2 1.6 2.0 reverse drain current vs. source to drain voltage pulse test 5 v v gs = ?5.0 v 10 v 50 40 30 20 10 25 50 75 100 125 150 0 channel temperature tch (c) repetitive avalanche energy e ar (mj) maximum avalanche energy vs. channel temperature derating i ap = 18 a v dd = 15 v duty < 0.1 % rg > 50 ?
HAT2195R rev.3.00, apr.01.20 04, page 5 of 6 pulse width pw (s) normalized transient thermal impedance vs. pulse width normalized transient thermal impedance s (t) 10 100 1 m 10 m 100 m 1 10 100 1000 10000 10 1 0.1 0.01 0.001 0.0001 d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse dm p pw t d = pw t ch - f(t) = s (t) x ch - f ch - f = 83.3c/w, ta = 25c when using the glass epoxy board (fr4 40x40x1.6 mm) vin monitor d.u.t. vin 10 v r l v ds = 10 v tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 90% 10% t f switching time test circuit switching time waveform rg d. u. t rg i monitor ap v ds monitor v dd 50 ? vin 15 v 0 i d v ds i ap v (br)dss l v dd e ar = l ? i ap 2 ? 2 1 v dss v dss ? v dd avalanche test circuit avalanche waveform
HAT2195R rev.3.00, apr.01.20 04, page 6 of 6 package dimensions package code jedec jeita mass (reference value) fp-8da conforms ? 0.085 g *dimension including the plating thickness base material dimension 1.75 max 4.90 0.25 0.15 0? ? 8? m 8 5 1 4 1.27 3.95 0.40 0.06 *0.42 0.08 5.3 max 0.75 max 0.14 + 0.11 ? 0.04 0.20 0.03 *0.22 0.03 0.60 + 0.67 ? 0.20 6.10 + 0.10 ? 0.30 1.08 as of january, 2003 unit: mm ordering information part name quantity shipping container HAT2195R-el-e 2500pcs taping note: for some grades, production may be terminated. please contact the renesas sales office to check the state of production before ordering the product.
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